MRFE6P3300HR3
7
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
800
15
22
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 32 Vdc
IDQ
= 1600 mA
f = 860 MHz
100
10
20
19
18
17
16
C
50
85C
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
1
TC
= -30
C
85C
25C
-30C
21
60
25
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
= 28 V
30 V
G
ps
, POWER GAIN (dB)
400
16
0 100 150 250 300 35050 200
18
IDQ
= 1600 mA
f = 860 MHz
32 V
17
19
20
21
250
107
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 32 Vdc, P
out
= 270 W PEP, and
ηD
= 44.8%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
106
105
104
110 130 150 170 190
MTTF (HOURS)
210 230
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRFE6P9220HR3
MOSFET RF N-CH 200W NI-860C3
MRFE6S8046NR1
MOSFET RF N-CH 45W TO-270-4
MRFE6S9045NR1
MOSFET RF N-CH 10W TO-270-2
MRFE6S9046NR1
MOSFET RF N-CH 45W TO-270-4
MRFE6S9060NR1
MOSFET RF N-CH 14W TO270-2
MRFE6S9125NR1
MOSFET RF N-CH 27W TO-270-4
MRFE6S9130HSR5
MOSFET RF N-CH 27W NI-780S
MRFE6S9135HSR5
MOSFET RF N-CH 39W 28V NI-880S
相关代理商/技术参数
MRFE6P9220HR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6P9220HR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S8046GNR1
功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S8046NR1
功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9045GNR1
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 45W TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9045N
制造商:Freescale Semiconductor 功能描述:
MRFE6S9045NR1
功能描述:射频MOSFET电源晶体管 HV6E 45W NI270-2 FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9045NR1-CUT TAPE
制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET